国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B032/194（5）
发明人 XU C（5）
公开年 2018（5）
申请年 2018（5）
专利权人 UNIV ZHEJIAN.（3）

Direct growing method for large area graphene on oxide insulating substrate involves spin coating layer of polymethyl methacrylate (PMMA) film as an etching support layer after finishing growth of layer of graphene film on metal surface.

XU C, SUN J, DONG Y, XIE Y, PAN G, WANG Q, QIAN F

Manufacture of graphene powder used in dispersion, involves mixing graphite powder, solvent and fluorine-containing hyperbranched polyethylene copolymer, ultrasonically stirring, vacuum filtering obtained graphene dispersion, and drying.

XU L, XU C, YE H

Wet transfer processing of non-polymer graphene, comprises e.g. cleaning and drying graphene growth of copper foil, preparing concentration corrosion solution, covering heptane on the graphene surface, pressing and post processing.

ZHAO P, WANG H, XU C, ZHANG X, YIN S

Preparing transfer graphene using wet method comprises e.g. cleaning, drying copper foil with graphene grown, disposing ferric chloride solution, forming mixed solution, adding mixed liquid to container.

ZHAO P, WANG H, XU C, MEI Y, YIN S

Wet transfer method for preparing wrinkle-free polymer-free graphene, involves cleaning copper foil on which graphene is grown, adding heptane-anti-wrinkle agent to graphene-copper foil, pressing against substrate, washing and drying.

ZHAO P, WANG H, XU C, WANG Y, YIN S