国家/地区 韩国（3）
IPC部 B（3）
IPC大类 B41（3） C01（3）
IPC小类 B41M（3）
IPC B41M005/10（3）
发明人
公开年 2015（3）
申请年
专利权人

Transferring graphene, comprises e.g. synthesizing graphene layer on catalytic metal film, laminating flexible transfer film on graphene to obtain first laminated structure, and removing catalyst metal film from first laminated structure.

PARK J S

Transfer of graphene used for e.g. solar cell, involves vacuum thermal-processing graphene laminate of support substrate and graphene, and transfer-target substrate to transfer graphene of graphene laminate to transfer-target substrate.

LEE B H, LEE S K, LEE S C

Forming graphene, used in manufacture of electronic device such as e.g. semiconductor device, comprises forming growth mask on metal catalyst layer, and growing graphene on portion of catalyst layer, which is not masked by growth mask.

PARK W I, YI J S