国家/地区 韩国（3）
IPC部 B（3）
IPC大类 B41（3） C01（3） B32（2）
IPC小类 B41M（3）
IPC B41M005/10（3）
发明人
公开年 2014（3）
申请年 2013（2） 
专利权人

Transferring graphene to fabricate graphene dual junction diode involves forming graphene layer by composing graphene and base layer; depositing self-assembled monolayer and separating combination layer of monolayer/graphene from base layer.

CHOI J S, YU Y, KIM J T, CHUNG K H, YOUN D H, CHOI C G, YU Y J

Manufacturing graphene film involves preparing catalyst metal having at least surface on which graphene is formed, forming support layer on graphene, and isolating graphene and support layer from catalyst metal.

NA D, LEE E, YOON J, NA D H, LEE E K, YOON J H, LI Y

Transfer method of graphene for manufacture of e.g. electrode, involves adhering self-adhesive film on graphene provided on material, removing graphene-adhered film from material, transferring to other material and removing film.

HONG B H, KIM S J, PARK M J, JO I S