国家/地区 德国（2）
IPC部 B（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人
公开年 2010（2）
申请年 2008（2）
专利权人

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T

Device for cutting graphene, includes reception to receive graphene, cutting element loaded with catalytically active material in cutting edge area, device to displace reception and cutting element with the cutting edge, and heating device.

KIRSTEIN S, RABE J P, SEVERIN N, RABE J