国家/地区 世界知识产权组织（2）
IPC部 B（2）
IPC大类 B82（2） C01（2） C09（2）
IPC小类 B82Y（2）
IPC C09C003/04（2）
发明人
公开年 2021（2）
申请年 2021（2） 
专利权人

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Method for exfoliation and functionalization of lamellar objects, involves placing electrode out of liquid, and generating plasma between portion of electrode facing surface of liquid and surface of liquid by applying pulse voltage difference between two electrodes.

CUYNET S, PONCOT M, FONTANA S, LETOFFE A, HENRION G, HEROLD C, ROYAUD I, BELMONTE T, GERARD H, STEPHEN Q, MARK P C, SEBASTIAN F, LETOPEADRIAN, GERARD H O, CLARE H, ISABEL L, THIERRY B