国家/地区 韩国（2）
IPC部 C（2）
IPC大类 C01（2） C23（2） H01（2）
IPC小类 C01B（2）
IPC C01B032/186（2）
发明人
公开年
申请年 2020（2）
专利权人

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J