国家/地区 美国（6）
IPC部 B（6）
IPC大类 C01（6） C25（6） B32（3）
B82（3） B01（2） C23（2）
IPC小类 C01B（6）
IPC C25F005/00（6）
发明人
公开年
申请年 2012（2） 
专利权人

Production of graphene film used in nanoelectronics, involves forming catalyst film on conductive support, forming graphene film on catalyst film, and electrolytically removing catalyst film from support.

BOTTE G G

Separating method for N-electrode electrochemical system, involves measuring voltage between working electrodes and reference electrodes such that graphene-support layer laminate separates from conducting substrate.

PIZZOCCHERO F, BOOTH T J, KOSTESHA N, AMATO L, BOGGILD P

Manufacturing graphene film involves preparing catalyst metal having at least surface on which graphene is formed, forming support layer on graphene, and isolating graphene and support layer from catalyst metal.

NA D, LEE E, YOON J, NA D H, LEE E K, YOON J H, LI Y

Removing graphene film grown on surface of metal substrate, comprises applying support layer to exposed surface of graphene film to define first structure, and subjecting first structure to electrochemical process to form gas bubbles.

LOH K P, WANG Y, LOH K

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V