国家/地区
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/182（3）
发明人 LIN H（3）
公开年
申请年 2020（2） 
专利权人

Semiconductor device, comprises substrate and fin structure on substrate, and includes epitaxial region, etch stop layer on epitaxial region, interlayer dielectric layer on etch stop layer, and metal contact through etch stop layer and interlayer dielectric layer.

SHEN T, HUANG J, CHEN S, LIN H, LIN C, WOON W, KHADERBAD M A

Preparing three-dimensional layered tin oxide quantum dot/graphene framework composite material comprises taking tin(II) chloride dihydrate and thiourea, dissolving in water to mix to obtain the product.

HAN S, KONG Y, GAO L, MA J, CHANG B, HUANG Y, LI Y, XUE Y, LIN H

Optical device e.g. endoscope used in optical coherence tomography system and scanning imaging system, has graphene lens which is arranged to focus electromagnetic radiation transmitted by optical fiber to focal region.

JIA B, LIN H