国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C23C016/56（3）
发明人
公开年 2015（3）
申请年 2014（2） 
专利权人

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Energy device used in supercapacitor application, comprises porous metal substrate, graphene layer deposited onto surface of porous metal substrate, carbon nanotubes, and metal oxide nanostructures.

WANG W, GUO S, OZKAN C S, OZKAN M

Growing nanostructured single layer graphene film involves selecting copper foil and then annealing selected material with graphene under mixed atmosphere of argon and hydrogen high temperature.

DONG J, HE H, LI K, WANG H, ZENG X