国家/地区 美国（3） 世界知识产权组织（3） 欧洲专利局（EPO）（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/04（4） C01B032/186（3） C01B032/194（2）
C23C016/26（2） G06F003/041（2）
发明人
公开年 2016（4）
申请年 2015（4）
专利权人

Active sensor element comprises e.g. a transistor placed on a first substrate and having a graphene channel layer and source and drain electrodes formed on both sides of graphene channel layer, and a second substrate formed on transistor.

PARK W, CHUN S

Synthesizing graphene involves annealing substrate in hydrogen gas atmosphere, subsequently undertaking deposition and nucleation step where relatively thick carbon layer is deposited onto substrate, and undertaking graphene growth step.

BOINTON T H, BARNES M D, RUSSO S, CRACIUN M, HARDISTY BOINTON T

Forming a graphene device, used to form sensor device, comprises forming a graphene film over a substrate, depositing a polymer material covering a surface of the film, by gas phase deposition, and removing the substrate from the film.

KALITA D, BOUCHIAT V, MARTY L, BENDIAB N

Method for preparing graphene conductive film for flexible touch device, involves growing graphene layer on metal-catalyzed base, and coating polyamic acid solution layer on graphene layer, where polyimide film is formed by thermal curing.

DI Y