国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3） C23（3） B82（2）
H01（2）
IPC小类 C01B（3）
IPC C23C016/44（3）
发明人
公开年 2011（3）
申请年 2010（2） 
专利权人

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

Graphene preparation involves putting substrate in closed cavity cooled by circulating water, where carrier gas is ventilated and substrate is heated.

LIU Y, HUANG L, WANG T, JI L, CHANG Q, GUO G

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V