国家/地区 德国（3）
IPC部 B（3）
IPC大类 B82（3） C01（3） H01（3）
B32（2） B44（2） C23（2）
IPC小类 B82Y（3）
IPC B82Y040/00（3）
发明人 AFZALIARDAKANI A（2）
公开年 2013（2）
申请年 2011（3）
专利权人 INT BUSINESS.（2）

Formation of patterned graphene layer on substrate used for low-noise amplifier, involves forming patterned structure(s) of carbide-forming metal or metal-containing alloy on substrate, applying layer of graphene and heating.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K, AFZALIARDAKANI A C O I

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Increasing conductivity of a graphene film, comprises exposing the graphene sheets to a solution comprising a one-electron oxidant configured to dope the graphene sheets.

BOL A A, AFZALIARDAKANI A, TULEVSKI G S, AFZALIARDAKANI A