国家/地区 韩国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/186（2）
发明人 KIM C（3）
公开年 2022（2）
申请年 2022（3）
专利权人

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

Two-dimensional microporous graphene for e.g. energy storage materials e.g. electrode active materials, electronic materials e.g. quantum dots, and membranes or films e.g. separator and chemical detector, has preset average pore size, interpore spacing, and standard deviation of interpore spacing.

KIM C, CHOI M, KI C M, KIM C H

Pellicle film used for extreme UV lithography, comprises boron nitride nanostructure layer.

CHOI J H, CHO S J, YU L, KIM C, LEE S Y, SEO K W, KIM K S, MOON S Y, KIMCHUNG, SEO K