国家/地区 韩国（7） 世界知识产权组织（4） 美国（3） 中国（2） 欧洲专利局（EPO）（2） 日本（2） 台湾（2）
IPC部 B（7）
IPC大类 B01（7）
IPC小类 C01B（7）
IPC C01B031/02（7）
发明人 JEON S（7）
公开年 2013（2） 2015（2）
申请年 2012（4）  2014（2） 
专利权人 KOREA ADVANC.（4） HANWHA CHEM .（2） KOREA ADV IN.（2）

Modification of graphene involves obtaining graphene having desired crystal size by repeating graphene modification process several times with subcritical or supercritical carbon dioxide.

DO S H, LEE J S, JEON S Y, KONG J H, DO SEUNG H, DO S, LEE J, JEON S, KONG J

Graphene comprises oxygen atom content in predetermined range, and has carbon/oxygen weight ratio of predetermined range.

LEE J S, DO S H, JEON S Y, KONG J H, DO SEUNG H, LEE J, DO S, JEON S, KONG J

Manufacture of graphene oxide complex for electrode, involves applying ultrasound to mix of graphene oxide dispersed solution and nickel hydroxide precursor solution, such that nickel hydroxide is provided between graphene oxide layers.

KIM J, JIN J, JEON S, YOU H

Manufacture of graphene involves preparing expanded graphene, mixing with metal ion hydrate, heating expanded graphite such that metal ion is inserted in interlayer of expanded graphene, and removing inserted metal ion from interlayer.

HUR S H, JEON S, KONG B S, SONG S H

Producing graphene used for e.g. electrical and electronic device, comprises dispersing graphite into quinoline to form graphene dispersed solution, centrifuging dispersed solution, and extracting graphene from upper layer of solution.

HO S S, JEON S

Manufacture of graphene for e.g. touch screen, involves loading substrate having catalyst layer into chamber, evaporating, supplying carbon source gas, heating in primary portion of catalyst layer, dissolving carbon component, and cooling.

JEON S, LEE J, OH S, RAN O S, SEOP L J, U JEON S, JIN S L, SE R O, SEOK W J

Manufacture of graphene involves obtaining forming graphite intercalation compound using alkaline metal or its ion, or alkaline earth metal or its ion, and dispersing graphite intercalation compound.

JEON S, KANG K, KWON J, PARK K, SEO D, JEON S W, KANG K S, KWON J Y, PARK K H, SEO D H, HWA S D, SEOK G G, YEONG K J, U JEON S