国家/地区 欧洲专利局（EPO）（4） 日本（4） 韩国（4） 美国（4） 世界知识产权组织（4） 中国（3） 台湾（2）
IPC部 B（4）
IPC大类 B01（4）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人
公开年 2015（4）
申请年 2014（4） 
专利权人

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Production of graphene involves forming liquid dispersion comprising dispersing agent, and carbon-based material comprising de-oxidized graphite, and continuously passing liquid dispersion through high-pressure homogenizer.

YOO K H, SOHN K N, KWON W J, LEE K S, YOO K, SOHN K, KWON W, LEE K

Modification of graphene involves obtaining graphene having desired crystal size by repeating graphene modification process several times with subcritical or supercritical carbon dioxide.

DO S H, LEE J S, JEON S Y, KONG J H, DO SEUNG H, DO S, LEE J, JEON S, KONG J

Electron microscopy support, useful for receiving biological sample e.g. serum, plasma and saliva, comprises support member, and partially hydrogenated graphene attached to member, where member is attached to support film.

RUSSO C J, PASSMORE L A, RUSSO C, PASSMORE L