国家/地区 中国（4）
IPC部 B（4）
IPC大类 B30（4）
IPC小类 B30B（4）
IPC C01B032/186（3） B21B001/40（2） B21B003/00（2）
B21B015/00（2） B21B045/00（2） B30B003/04（2）
B30B015/00（2）
发明人 ZHANG Y（4）
公开年 2022（4）
申请年 2022（4）
专利权人 CHINESE ACAD.（4） CHONGQING GR.（4）

Device for continuously preparing high-conductivity graphene metal composite material, comprises sealing chamber and gas circuit mechanism for introducing process gas and gaseous carbon source to sealing chamber.

SHAO L, DUAN Y, SHI H, ZHANG Y, LI Z

Producing graphene metal layered complex material useful in e.g. aviation and space comprises stacking number of metal base material separated by interlayer material in sealing chamber, growing graphene on metal base material, stacking graphene metal complex materials, and hot pressing.

SHAO L, DUAN Y, SHI H, LI Z, ZHANG Y

Method for performing plasma-preparation of high-conductivity graphene metal composite material for use in electric appliance and electronic fields, involves growing graphene on metal base material under plasma condition to obtain metal substrate.

SHAO L, LI X, ZHANG Y, LI Z, DUAN Y, HUANG D, SHI H

Method for manufacturing graphene metal layered composite material, involves obtaining metal matrix composite material and graphene metal layered composite material, and finishing graphene growth and hot-pressing molding process in same sealing chamber.

SHAO L, DUAN Y, SHI H, ZHANG Y, LI Z