国家/地区 美国（6） 中国（5） 台湾（4）
IPC部 B（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC B82Y040/00（4） C01B031/04（4） B82Y030/00（3）
B32B009/04（2） B32B033/00（2） C01B021/064（2）
C01B031/02（2） C04B035/583（2） C04B035/622（2）
C04B035/653（2） C23C014/06（2） H01L021/02（2）
发明人 SUNG C（6） SONG J（4） LIN I（3）
HU S C（2） YU C（2）
公开年 2013（2）
申请年 2012（2） 
专利权人 SUNG C（6）

Forming graphene layer for e.g., LEDs, by mixing carbon source with horizontally oriented molten solvent, precipitating carbon source to form graphite layer across molten solvent, and separating graphite layer into a set of graphene layers.

SUNG C, HU S C, LIN I, YU C

Structure useful to shield electromagnetic disorders for shielding electromagnetic radiation, comprises thin layer of graphene and flexible substrate, in which thin layer of graphene is applied on flexible substrate and is doped with dopant.

AVOURIS P, GARCIA A V, SUNG C, XIA F, YAN H

Fabricating patterned graphene, comprises forming catalytic layer on substrate and carbon layer of e.g. iron on catalytic layer, photolithographically etching on carbon layer and heating obtained layer to form patterned graphene layer.

SUNG C, LIN I, LIN H, LIN Y, SONG J

Making graphene on diamond substrate, comprises applying metal layer to crystallographic face of diamond substrate, and heating diamond substrate under vacuum to convert portion of diamond substrate at crystallographic face into graphene.

SUNG C, SONG J

Electronic device useful as e.g. electronic display, comprises graphene layer, planar hexagonal boron nitride layer operably associated with graphene layer, power source, phosphor layer, and metal atoms intercalated in boron nitride layer.

SUNG C, SONG J

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J