国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B032/186（4）
发明人 YU C（4）
公开年 2018（2）
申请年 2020（2） 
专利权人 SAURER JIANG.（3）

Preparing large-size clean graphene material used for optoelectronics, by growing graphene layer on surface of metal substrate, forming metal layer on graphene layer, forming photoresist layer, and adhering glue-containing soft film.

GAO X, FENG Z, YU C, HE Z, LIU Q, GUO J, ZHOU C

Preparing silicon carbide-based twisted multilayer graphene material involves growing graphene materials on silicon carbide substrates, taking hydrogen as carrier gas and introducing gaseous carbon source to grow.

LIU Q, YU C, HE Z, GAO X, GUO J, ZHOU C, FENG Z

Auxiliary device for preparing graphene, comprises supporting body, buffer layer which is arranged on upper surface of supporting body, where buffering layer is provided with multiple penetrating buffer layer of hole.

GAO X, FENG Z, YU C, LIU Q, HE Z, ZHOU C, GUO J

Modified chemical vapor deposition for preparing uniform graphene material, involves selecting silicon carbide substrate, cleaning, drying, vacuumizing, turning on microwave power, heating and removing gas adsorbed on surface substrate.

LIU Q, WEI C, HE Z, WANG J, GUO J, ZHOU C, FENG Z, YU C