国家/地区
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人
公开年 2011（2）
申请年
专利权人

Epitaxially growing cold cathode field emitting material, i.e. carbon film, on silicon carbide substrate by controlling density and length-width ratio of graphene strip through pressure and temperature in growth process.

WANG G, WANG W, JIA Y, CHEN X, GUO L, LI K, HUANG Q, PENG T, LIN J

Preparing graphene base, comprises disposing carbon-based material on surface of substrate incapable of catalyzing graphitization, disposing graphitization catalyst layer on material and forming graphene by thermally treating substrate.

SHIN H, CHOI W, CHOI J, YOON S, SHIN H J, CHOI W M, CHOI J Y, YOON S M