国家/地区 美国（2）
IPC部 C（3） B（2）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/04（3）
发明人
公开年
申请年 2016（3）
专利权人

Producing graphene structure useful for transistor and photo detectors, comprises e.g. forming an aluminum pattern on a substrate, forming a graphene layer on substrate and aluminum pattern, and depositing a metal layer on graphene layer.

DONG J L, JONG C Y

Manufacturing method of coated article with graphene-inclusive thin film, involves mechanically removing graphene on major surface of nickel layer and graphene initially formed at interface of silicon layer and nickel layer.

VEERASAMY V S, VEERASAMY V

Manufacturing method of graphene layer on substrate, involves exfoliating metalized graphene layer from first substrate and laminating metalized graphene layer to second substrate.

ZARETSKI A, LIPOMI D J