国家/地区 韩国（3） 美国（2）
IPC部 B（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/02（3）
发明人 WON D K（2）
公开年 2012（3）
申请年 2011（2） 
专利权人 HANWHA TECHW.（2） SAMSUNG TECH.（2）

Graphene manufacturing device has heating portion anneals processed substrate in which amorphous carbon is deposited.

GWAN W D, YEONG K N, WON D K, KIM N Y

Graphene synthesis chamber for synthesizing graphene comprises chamber case in which substrate comprising metal thin film, gas supply unit, main heating unit which emits light to inner space to heat substrate; and auxiliary heating unit.

WON D, NAM W, WON D K, NAM W S

Fabricating a three dimensional graphene structure e.g. carbon nanotube, comprises growing graphene on metal catalyst template in certain form, and removing template by dissolving template on which graphene has grown, in etching solvent.

YOO J, PATOLE S P, LEE H, YOO J B, SHASHIKANT P P