国家/地区 美国（2）
IPC部 C（2） G（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B032/186（2）
发明人
公开年
申请年
专利权人

Manufacturing graphene electrode, comprises e.g. forming carbon source on substrate, forming photoresist layer on carbon source, exposing photoresist layer with mask, developing photoresist layer after exposure and forming metal layer.

WANG H

Manufacturing method for nano structure antireflection film, involves forming antireflection film using graphene as growth substrate, after forming hexagonal graphene honeycomb lattice on silicon dioxide layer.

ZHA G