国家/地区 韩国（2）
IPC部 B（2） C（2）
IPC大类 B01（2） C01（2） C23（2）
IPC小类 B01J（2）
IPC B01J019/08（2）
发明人 WON D K（2）
公开年 2012（2）
申请年
专利权人 HANWHA TECHWIN CO LTD（2）

Graphene manufacturing device has heating portion anneals processed substrate in which amorphous carbon is deposited.

GWAN W D, YEONG K N, WON D K, KIM N Y

Graphene synthesis chamber for synthesizing graphene comprises chamber case in which substrate comprising metal thin film, gas supply unit, main heating unit which emits light to inner space to heat substrate; and auxiliary heating unit.

WON D, NAM W, WON D K, NAM W S