国家/地区 韩国（2）
IPC部 C（2） H（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2）
IPC H01L021/768（2） H01L023/532（2）
发明人 JUNG A R（2）
公开年 2023（2）
申请年
专利权人 SAMSUNG ELEC.（2）

Interconnect structure for electronic device, comprises first dielectric layer including trench, conductive wire filling inside of trench, first cap layer on top surface of conductive wire, first cap layer including doped graphene, and doped graphene being graphene doped with group fifth element.

JUNG A, KIM S, SHIN K, SHIN K W, KIM S T, JUNG A R

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S