国家/地区 中国（2）
IPC部 B（2） C（2）
IPC大类 B82（2） C01（2）
IPC小类 B82Y（2）
IPC B82Y030/00（2）
发明人
公开年 2011（2）
申请年
专利权人

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O

Producing graphene, comprises introducing a solution of a metal alkoxide in a solvent into a decomposition apparatus, which includes a first region having a high temperature to cause thermal decomposition of the metal alkoxide.

COLEMAN K S