国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5） G01（5） B82（2）
IPC小类 C01B（5）
IPC C01B032/186（5）
发明人 ZHANG H（5）
公开年 2018（2） 2021（2）
申请年
专利权人 UNIV HARBIN .（3）

Preparation method of a graphene-CMOS monolithic integrated detector chip, involves depositing isolation layer on surface of CMOS integrated circuit, and etching through hole in isolation layer to fill metal.

CHEN H, HUANG Y, ZHANG H, CHENG C, CHEN R, HUANG B

Graphene-based standard leak hole comprises gas source chamber, pressure side metal knife edge flange, helium permeation component, and vacuum side metal knife edge flange.

REN G, MENG D, YAN R, SUN L, WANG L, LI Z, LIU Z, ZHANG X, ZHANG H

Preparing three-dimensional graphene for detecting dopamine electrochemically involves preparing three-dimensional graphene material involves preparing ultrafine nickel powder by hydrazine reduction method, adding hydrazine hydrate.

YUE H, WANG Z, YU Z, GAO X, ZHANG H

Preparing a molybdenum disulfide-graphene composite nanosheet comprises e.g. placing foamed nickel in quartz tube furnace, adding methane gas and cooling to obtain graphene-coated foam nickel.

YUE H, SONG S, GAO X, WANG B, ZHANG H

Preparing graphene/zinc oxide nano-line array/three-dimensional foam composite material comprises e.g. chemical vapor deposition, hydrothermal synthesis and chemical vapor deposition.

YUE H, LIN X, GAO X, WANG B, YAO L, GUO E, SONG S, ZHANG H, GUAN E