国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC B82Y030/00（2） H01M004/62（2） H01M010/0525（2）
发明人 LIN S（4）
公开年 2017（2）
申请年 2017（2） 
专利权人

Preparation of monolayer graphene involves selecting high pressure reaction vessel as solvothermal reaction vessel, preparing lithium hexafluorophosphate electrolyte/graphite precursor solution, cooling and centrifuging.

YANG Z, GUO T, AI J, LIU J, ZHANG Y, HU H, XU S, CHEN G, LI F, LIN S

Preparing high density graphene used as super-capacitor material, involves dissolving high density graphene in ionic liquid, carrying out solid liquid separation, washing with de-ionized water until it becomes neutral and drying.

JIN X, LIN S, WANG Z

Preparing doped metal oxide/graphene composition nano material comprises e.g. preparing graphene oxide aqueous solution by improved Hummers method, carrying out centrifugal washing, taking metal ion salt, urea and dispersing ultrasonically.

LI Q, PAN Q, LIN S, JU X, WANG T

Semiconductor device e.g. transistor, has second active area, graphene channel that is formed between first and second active areas, comprises first and second sides and first in-plane gate that is proximate to first side.

LIN M, LIN S, LEE S, LIN M Y, LIN S Y, LEE S C, LI S