国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 JIANG K（2）
公开年
申请年
专利权人

Processing the double-sided doping of single-layer graphene comprises e.g. using methane, hydrogen, and argon as gas sources in catalytic metals in a low-pressure CVD system growth of single-layer graphene film on the substrate.

LI D, CHEN Y, SUN X, JIA Y, JIANG K, SHI Z, ZANG X

Making strip shaped graphene layer used as conductive layer in semiconductive device, comprises making drawn carbon nanotube film, disposing carbon nanotube composite, removing polymer material and etching nanotube segment and graphene film.

LIN X, JIANG K, FAN S