国家/地区 德国（3）
IPC部 C（3）
IPC大类 C01（3） C23（2）
IPC小类 C01B（3）
IPC C01B032/186（3）
发明人 DIXON S（2） GUINEY I（2） THOMAS S（2）
公开年 2022（3）
申请年
专利权人 PARAGRAF LTD（2）

Producing graphene useful for electronic devices comprises forming graphene on non-metallic surface of substrate by chemical vapor deposition in reaction chamber and adding precursor in gas phase and suspended in gas into reaction chamber.

DIXON S, GRIFFITHS J, GRIFFIN R M, GUINEY I, THOMAS S

Deposition of two-dimensional layers on substrate in process chamber, involves heating substrate, feeding reactive gas of carbon-containing chalcogenide, and adjusting substrate temperature, process chamber pressure, and partial pressure of reactive gas so that graphene is deposited as layer.

MCALEESE C, CONRAN B R, TEO K B K

Forming graphene on silicon substrate for electronic device, comprises providing silicon wafer having growth surface free of native oxides in reaction chamber, and nitriding growth surface with nitrogen-containing gas with wafer.

DIXON S, GUINEY I, THOMAS S, THOMAS S C S