国家/地区 日本（3）
IPC部 B（3）
IPC大类 C01（3） B82（2）
IPC小类 C01B（3）
IPC B82Y040/00（2）
发明人 HAYASHI K（2）
公开年 2023（3）
申请年 2021（2） 
专利权人 FUJITSU LTD（3）

Production of graphene nanoribbons used in semiconductor device e.g. field effect transistor for electronic devices, involves synthesizing polyaromatic-based polymer by eliminating specific group from polymer, and bonding carbon atoms of aromatic ring from which specific group is eliminated.

YAMAGUCHI J

Manufacturing optical device by forming resist of predetermined shape on multilayer graphene, and processing multilayer graphene together with resist, removing resist covering, and providing electrode covering exposed inclined end face of multilayer graphene.

KONDO D, HAYASHI K, ASO H

Producing multilayer graphene, involves synthesizing multilayer graphene from carbon source using iron-chromium alloy film as catalyst.

HAYASHI K, KONDO O