国家/地区 欧洲专利局（EPO）（2）
IPC部 B（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2）
IPC C01B032/184（2）
发明人
公开年
申请年
专利权人

Preparation of graphene on surface of silicon carbide, involves subjecting silicon carbide crystal with crystallographic orientation of surface to specified pressure, annealing under preset pressure, and annealing in stream of silicon atoms.

CIOCHON P, KOLODZIEJ J, CICHON P

Graphite-type carbon raw material used as graphene precursor, has rhombohedral system graphite layer and hexagonal system graphite layer in ratio more than preset value, as measured using peak intensities specific planes of layers.

HASEGAWA S, KAMIYA N, SHOJI H, NAGISA K, HASEGAWA SHOJI, KAMIYA NAGISA, SHEN Y