国家/地区 日本（4）
IPC部 B（4）
IPC大类 B82（4） C01（4） H01（4）
IPC小类 B82Y（4）
IPC C01B032/15（4）
发明人 TODORIKI H（3） TODOROKI H（3） NOMOTO K（2）
公开年 2013（3）
申请年 2012（4）
专利权人 SEMICONDUCTO.（3） TODORIKI H（3） NOMOTO K（2）

Preparing a semiconductor substrate, useful for forming a multilayer article, comprises forming a metal film on the substrate, contacting metal film surface with a carbon-containing gas and precipitating carbon atoms to form graphene layer.

SEACRIST M R, BERRY V

Forming electrode material comprises forming layer including graphene oxide on first conductive layer, immersing first and second conductive layers in electrolyte and electrochemically reducing part of graphene oxide in first layer.

TODORIKI H, SAITO Y, KAWAKAMI T, NOMOTO K, YUKAWA M, TODOROKI H, YUGAWA M, YONEDA Y

Graphite oxide manufacturing method for producing graphene used in e.g. secondary battery of electronic and electric device, involves performing electrodialysis to remove cations from solution.

TODORIKI H, TAKEMURA Y, NOMOTO K, TODOROKI H

Electrode such as a positive electrode or a negative electrode, useful in a battery e.g. manganese battery, comprises active material particles, and a graphene net that includes graphene sheets and is formed by heat treatment.

TODORIKI H, MOMO J, OGUNI T, INOUE N, TODOROKI H, KOKUNI T