国家/地区 中国（2）
IPC部 B（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/02（2）
发明人
公开年
申请年 2013（2） 
专利权人

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A