国家/地区 中国（5）
IPC部 B（5）
IPC大类 B32（5）
IPC小类 B32B（5）
IPC C01B031/04（4） B82Y040/00（3） B32B009/00（2）
B32B033/00（2） B82Y030/00（2） C01B021/064（2）
C01B031/02（2）
发明人 SUNG C（5）
公开年
申请年 2012（2） 
专利权人 SUNG C（4） SONG J（3） LAIZUAN CO L.（2） LIN I（2）
RITEDIA CORP（2）

Fabricating graphene platelet, comprises providing highly-graphitized graphene, and providing shear force acting on graphitized graphene to separate highly-graphitized graphene into graphene platelets having single or multi-layer structure.

LIN I, LIN H, LIN Y, SONG J, SUNG C, LIN I C, SUNG C M, LIN H C

Fabricating patterned graphene, comprises forming catalytic layer on substrate and carbon layer of e.g. iron on catalytic layer, photolithographically etching on carbon layer and heating obtained layer to form patterned graphene layer.

SUNG C, LIN I, LIN H, LIN Y, SONG J

Making graphene on diamond substrate, comprises applying metal layer to crystallographic face of diamond substrate, and heating diamond substrate under vacuum to convert portion of diamond substrate at crystallographic face into graphene.

SUNG C, SONG J

Electronic device useful as e.g. electronic display, comprises graphene layer, planar hexagonal boron nitride layer operably associated with graphene layer, power source, phosphor layer, and metal atoms intercalated in boron nitride layer.

SUNG C, SONG J

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J