国家/地区 美国（2）
IPC部 C（2）
IPC大类 C01（2） C23（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人
公开年 2016（2）
申请年 2015（2）
专利权人

Method for growing two-dimensional crystals e.g. graphene, involves heating crystal-growing furnace to enable reaction gas to react on stacked substrate, and forming two-dimensional crystal on surface of sub-substrates in stacked substrate.

HSIEH Y, HOFMANN M, CHIU Y

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R