国家/地区 韩国（4）
IPC部 B（4）
IPC大类 B41（4）
IPC小类 B41M（4）
IPC B41M005/10（4）
发明人
公开年 2011（2）
申请年
专利权人 SAMSUNG TECH.（2）

Transferring graphene to fabricate graphene dual junction diode involves forming graphene layer by composing graphene and base layer; depositing self-assembled monolayer and separating combination layer of monolayer/graphene from base layer.

CHOI J S, YU Y, KIM J T, CHUNG K H, YOUN D H, CHOI C G, YU Y J

Graphene transfer method involves attaching end of stacked structure having catalyst metal, graphene and supporting body, to a point of target film; forming second structure by removing the metal and transporting film in roll-to-roll manner.

KIM N, KIM N Y

Manufacturing method of graphene transfer film involves applying air pressure to at least one of graphene growth film and carrier film so that graphene and carrier film are attached to each other.

CHO S, SONG Y, CHO S H, SONG Y I

Roll-to-roll transfer of graphene for producing graphene roll, involves transferring graphene layer on material to substrate by passing through roller portion, immersing obtained laminate into etching solution, and removing material.

AHN J, BAE S, HONG B H, KIM H K, BAE S K, JANG H, JANG S, KOO J B, HONG B, KIM H, HUI H B, HYEON A J, GANG B S, GEUN K H