国家/地区 世界知识产权组织（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C04B035/565（3）
发明人
公开年
申请年
专利权人

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Hybrid material for coating system, has stack of vitreous or glass-ceramic lamellae, in which graphene-based filler material is oriented parallel to lamellae, located in interlayers between lamellae, and forms interconnected network.

GARCIA GRANADOS E S, MIRANZO LOPEZ P, NISTAL GONZALEZ A, OSENDI MIRANDA M I, SAINZ TRIGO M A, GONZALEZ A, GRANADOS E S, LOPEZ P, MIRANDA M I, TRIGO M A

Manufacture of graphene on polycrystalline silicon carbide used as bearing element in mechanical engineering, involves polishing silicon carbide components, cleaning, and graphitizing polished surface by annealing.

BENNEWITZ R, ASLAN M, WAEHLISCH C F