国家/地区 中国（4） 美国（2） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C04（4） C01（2） C23（2）
IPC小类 C04B（4）
IPC C04B041/50（4）
发明人 CHENG H（2）
公开年 2012（4）
申请年 2012（4） 
专利权人

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparing graphene composite film on silicon wafer surface comprises silicon wafer surface assembled with amino silane film, soaking in graphene oxide suspension, and drying and heating film to obtain the reduced graphene composite film.

CHENG H, CHENG X, LEI Z, SHU D, WANG C

Manufacture of graphite alkene film and graphene composite carbon film for manufacturing semiconductor thin film, involves spraying precursor solution prepared using graphene dispersion liquid on silicon substrate, drying and heating.

CHEN J, LI J, CHEN L, ZHANG Z, ZHOU J