首页
论文数据库
SCI论文数据库
中文期刊数据库
硕博士论文数据库
专利库
专家库
企业库
产品库
登录
搜索
国家/地区
美国(2)
IPC部
C(2)
IPC大类
C01(2)
IPC小类
C01B(2)
IPC
C23C016/32(2)
发明人
公开年
申请年
2021(2)
专利权人
Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.
JO D W, CAO D, WAN J, CHO D W
Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.
CHABI S
上一页
当前第
1
页 共
2
条
下一页