国家/地区 美国（2）
IPC部 B（2）
IPC大类 B82（2）
IPC小类 B82Y（2）
IPC B82Y030/00（2）
发明人
公开年 2021（2）
申请年
专利权人

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F