国家/地区
IPC部 C（2）
IPC大类 C04（2）
IPC小类 C04B（2）
IPC
发明人
公开年 2021（2）
申请年 2021（2）
专利权人

Preparation of graphite thermal field material surface-coated with tantalum carbide coating for high temperature third-generation semiconductor crystal growth furnace, involves high-pressure water treating graphite surface, plasma spraying tantalum powder, infiltrating graphite, and carbonizing.

TANG B, WU X

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S