国家/地区 日本（2）
IPC部 C（2）
IPC大类 C04（2）
IPC小类 C04B（2）
IPC
发明人
公开年 2022（2）
申请年
专利权人

Ceramic structure for forming component of plasma processing apparatus, contains silicon carbide, silicon carbonitride, titanium carbide or titanium carbonitride as main component, and two main surfaces having different carbon concentration.

HAMASHIMA H

Ceramic capacitor used in electronic device, comprises dielectric nanocrystal array layer, lower electrode and upper electrode arranged opposite to each other and inorganic two-dimensional material layer.

ITASAKA H, MIMURA K, LIU Z, KATO K