国家/地区 中国（2）
IPC部 C（2）
IPC大类 C04（2）
IPC小类 C04B（2）
IPC C04B041/50（2）
发明人 WEI C（2）
公开年 2013（2）
申请年
专利权人 UNIV XIDIAN（2）

Graphene preparation method for nickel film annealing of silicon carbide substrate involves generating carbon film, introducing nickel film via growth device, electron beam evaporation and deposition and depositing nickel onto carbon film.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG C

Preparation of graphene used for manufacturing high-mobility graphene transistor comprises performing plasma-enhanced chemical vapor deposition to deposit silicon dioxide and performing physical vapor deposition to plate copper film.

ZHANG Y, WEI C, LEI T, ZHANG K, GUO H, ZHAO Y