国家/地区 日本（3） 世界知识产权组织（3） 韩国（2） 美国（2）
IPC部 C（3）
IPC大类 C07（3） C01（2） H01（2）
IPC小类 C07B（3）
IPC C07B061/00（3）
发明人
公开年 2014（3）
申请年 2013（3）
专利权人

Organic-semiconductor film used for channel in transistor structure, has pseudo graphene structure including two-dimensional network structure which is formed continuously.

KAGAYA M, MATSUMOTO T, KATO D, KATO T

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

Method for carrying metal on graphene oxide for metal-oxidation graphene complex, involves adding solution of metal salt or metal ion to oxidation graphene dispersion, and adding alcohol, N,N-dimethylformamide and/or tetrahydrofuran.

NISHINA YUTA