国家/地区 日本（3） 世界知识产权组织（3） 中国（2） 韩国（2） 美国（2）
IPC部 C（4）
IPC大类 C07（4） C01（2） H01（2）
IPC小类 C07B（4）
IPC C07B061/00（3） C01B031/02（2） C07C015/14（2）
C07C025/22（2） H01L051/05（2） H01L051/30（2）
H01L051/40（2）
发明人
公开年 2014（4）
申请年 2013（3） 
专利权人

Organic-semiconductor film used for channel in transistor structure, has pseudo graphene structure including two-dimensional network structure which is formed continuously.

KAGAYA M, MATSUMOTO T, KATO D, KATO T

Preparing diphenyl ether compound comprises mixing halogenated benzene compound, phenolic compound, alkali and tetrahydrofuran, adding cuprous oxide, ultrasonically dispersing the mixture in the presence of a graphene catalyst and heating.

GUO X, DI Z

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

Method for carrying metal on graphene oxide for metal-oxidation graphene complex, involves adding solution of metal salt or metal ion to oxidation graphene dispersion, and adding alcohol, N,N-dimethylformamide and/or tetrahydrofuran.

NISHINA YUTA