国家/地区 美国（3） 世界知识产权组织（2）
IPC部 B（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/02（3）
发明人
公开年
申请年
专利权人

Manufacturing graphene used in field effect transistor, supercapacitor, hydrogen generation or storage, solar cell, photocatalyst and biosensor, comprises forming the graphene by unzipping doped carbon materials by an external stimulus.

KIM S O, LEE H J, LIM J, KIM S

Material useful for preparing chromatography column for isolating protein from sample, and for preparing graphene oxide, comprises a graphene derivative comprising a graphene core and a first pendant group.

CHHOWALLA M, VITTADELLO M, WORONOWICZ K, FALKOWSKI P G, HARROLD J W, HARROLD J

Modified graphene comprising sp3 orbital, useful in e.g. spintronics device, magneto-electronic device, wafer, ferromagnetic semiconductor, and field effect transistor, and as room temperature ferromagnetic semiconductor.

BEKYAROVA E, HADDON R C, HONG J, ITKIS M E, KHIZROEV S, RAMESH P