国家/地区 韩国（4）
IPC部 C（4）
IPC大类 C01（4） C07（4）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人
公开年
申请年 2016（2） 
专利权人

Manufacturing graphene used in field effect transistor, supercapacitor, hydrogen generation or storage, solar cell, photocatalyst and biosensor, comprises forming the graphene by unzipping doped carbon materials by an external stimulus.

KIM S O, LEE H J, LIM J, KIM S

Graphene compound for barrier element and clear packaging for product comprises optionally functionalized graphene directly bonded to nitrogen-containing compound.

ZHENG S

Manufacture of doped reduced graphene oxide involves dispersing graphene oxide in organic solvent, adding boron trifluoride etherate, alkyl thiol, aryl thiol, alkyl amine or arylamine to dispersed graphene oxide, and processing.

LEE H

Material composition used for electrode e.g. cathode for battery e.g. lithium-sulfur battery, comprises graphene oxide-sulfur nanocomposite including graphene oxide containing functional groups, and sulfur bonded to carbon atoms.

ZHANG Y, CAIRNS E J, JI L, RAO M, CAIRNS E