国家/地区 中国（3）
IPC部 C（3）
IPC大类 C08（3）
IPC小类 C08K（3）
IPC C08K003/04（3）
发明人 HUANG X（2） JIANG P（2） YANG K（2）
公开年 2014（3）
申请年 2014（2） 
专利权人 UNIV SHANGHA.（2）

Polymer composite material used in preparing embedded capacitor, FET and other advanced electronic devices, comprises fluorinated ferroelectric polymer matrix including polyvinylidene difluoride, and fluoropolymer grafted graphene filler.

BO J, JIANG P, HUANG X, SUN X, YANG K, ZHU M

Light flexible polymeric based high specific energy storage material useful to prepare e.g. embedded capacitor and field effect transistor, comprises fluorinated ferroelectric polymer substrate and fluoropolymer modified graphene filler.

FAN Y, JIANG P, HUANG X, WANG S, YANG K, LIU Q

Composite material for manufacturing capacitor device such as memory device, capacitor, transistor or diode, comprises polymeric material and hydrazine-reduced graphene oxide.

ALMADHOUN M N, ALSHAREEF H N, BHANSALI U S, XAVIER P, ODEH I N, ALMADHOUN M, MADHOUN M, SHARIF H A, BHANSALI Y S, EXAER P