国家/地区 中国（4）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B032/186（5）
发明人
公开年 2021（2） 2023（2）
申请年 2021（5）
专利权人

Method for fabricating two-dimensional channel transistor involves growing hexagonal-boron nitride layer on substrate, selectively etching hexagonal-boron nitride layer by exposing hexagonal-boron nitride layer to sulfur hexafluoride plasma gas, and treating etched layer in potassium hydroxide.

SHRIVASTAVA M, RAWAT J S, MEERSHA A

Use of nitrogen-doped graphene metal material in heat-conducting field where nitrogen-doped metal graphene comprises metal base material and nitrogen-doped graphene.

WU Q, MA Y

Use of graphene film as high temperature resistant thermal interface material or heat dissipation film material.

CHENG H, LIU H, MA C, REN W

Preparing graphene quantum dots comprises carrying out chemical vapor deposition of magnesium oxide as templating agent, ultrasonic dispersing in mixed acid solution, heating, neutralizing with alkali, filtering, and dialyzing.

NING G, TIAN L

Preparing vertical graphene-based thermal interface material comprises preparing vertical graphene through plasma-enhanced chemical vapor deposition process under action of electric field.

ZHANG J, XU S, JI N, CHEN Z