国家/地区 中国（2）
IPC部 B（2）
IPC大类 B05（2） C25（2）
IPC小类 B05D（2）
IPC C25D007/00（2）
发明人 ZHANG J（2）
公开年
申请年 2021（2） 
专利权人

Forming substrate in substrate hole used in plating technology involves pre-processing surface of insulating base material and hole structure, coating graphene dispersion, applying different rotation radius and different rotating speeds to insulating base and plating material with conductive layer.

XIANG Q, YE G, CAO X, ZHANG J, LU J, MA Y, ZHENG K

Preparation of graphene-encapsulated ultra-thin nickel-63 radiation source film used in preparation of Schottky junction stacked radiation cell, involves preparing nickel chloride film, and putting graphene/nickel chloride/graphene film in vacuum environment for reduction treatment.

WANG X, WANG L, CHEN Z, YANG Y, ZHANG J, SU C, FENG H, LI P, WU W, LUO T, ZHOU C